vishay BYG23M document number 86062 rev.2,0 7 - jan -0 3 vishay semiconductors www.vishay.com 1 15 811 ultraf ast avalanche smd rectifier features ? glass passivated junction ? low reverse current ? high reverse voltage ? fast reverse recovery time ? wave and reflow solderable applications freewheeling diodes in smps and converters snubber diodes order information absolute maximum ratings t j = 25 c, unless otherwise specified maximum thermal resistance t j = 25 c, unless otherwise specified electrical characteristics t j = 25 c, unless otherwise specified part number part differentiation BYG23M v r = 1000 v @ i fav = 1.5 a parameter test condition sub type symbol value unit reverse voltage = repetitive peak reverse voltage v r = v rrm 1000 v peak forward surge current t p = 10 ms, half sinewave i fsm 30 a average forward current t amb = 65 c i fav 1.5 a junction and storage temperature range t j = t stg - 55 to + 150 c pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r = 1 a e r 20 mj parameter test condition sub type symbol value unit junction case r thjc 25 k/w junction ambient mounted on epoxy-glass hard tissue, 17 mm 2 35 m cu r thja 150 k/w mounted on epoxy-glass hard tissue, 50 mm 2 35 m cu r thja 125 k/w mounted on al-oxid-ceramic (al 2 o 3 ), 50 mm 2 35 m cu r thja 100 k/w parameter test condition sub type symbol min ty p. max unit forward voltage i f = 1.0 a v f 1.7 v i f = 1.0 a, t j = 150 c v f 1.35 v reverse current v r = v rrm i r 5 a v r = v rrm , t j = 125 c i r 50 a breakdown voltage i r = 100 a v (br)r 1000 v reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr 75 ns
document number 86062 rev. 2, 07-jan-03 www.vishay.com 2 vishay BYG23M vishay semiconductors charateristics (t j = 25 c unless otherwise specified) figure 1. max. forward current vs. forward voltage figure 2. max. average forward current vs. ambient temperature figure 3. max. reverse power dissipation vs. junction temperature 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i C forward current ( a ) v f C forward voltage ( v ) 16096 f t j =25 c t j =150 c 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 t amb C ambient temperature ( c ) 16092 i C average forward current ( a ) fav v r =v rrm half sinewave r thja = 25k/w 125k/w 150k/w 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 t j C junction temperature ( c ) 16094 v r = v rrm p C reverse power dissipation ( mw ) r 100% 175k/w r thja = 125k/w 80% figure 4. max. reverse current vs. junction temperature figure 5. typ. diode capacitance vs. reverse voltage 1 10 100 1000 25 50 75 100 125 150 1 10 100 1000 25 50 75 100 125 150 t j C junction temperature ( c ) 16095 v r = v rrm i C reverse current ( a ) r 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0.1 1.0 10.0 100.0 v r C reverse voltage ( v ) 16093 c C diode capacitance ( pf ) d f=1mhz t j =25 c
vishay BYG23M document number 86062 rev. 2, 07-jan-03 vishay semiconductors www.vishay.com 3 dimensions in mm 14275
|
